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BX- 30

BX- 30

Based on significant improvements to the the original Boxer-Cross technology the Semilab BX-30 enables in-line monitoring of implant/anneal processes on product wafers for immediate, accurate, and low-cost production control of implant and RTP systems and in-line monitoring for pre and post anneal implant.

Value Proposition

  • Non-contact optical method measures directly on product wafers à low cost, lower cycle time, represents true product results
  • Quickly locates source of implant/anneal module problems by providing both implant dose and RTP control measurements
  • Highest throughput in market for production monitoring applications
  • New advanced optics designed for high stability, MTBF and MTTR

Application Capability

  • Implant dose concentration
    • dose range 1x1010 cm-2 to 1x1016 cm-2;
    • energy range 100 eV to 3 MeV
    • species As, B, P, BF2, In, Sb (other species under development)
    • Process requirements- Unannealed implanted layers, Surface oxide < 20 nm (200 Å)
    • Repeatability- 1 σ < 0.5% for critical dose ranges
  • PAI depth – depth range10 nm to 100 nm
  • Junction depth measurement- depth range10 to 70 nm
  • Measurement on SOI substrates (under development)
  • Lateral diffusion measurement (under development)
  • Metal structures measurement (v.d)

Hardware Technology:

  • High-reliability, solid state pump and probe lasers (830 nm red pump- 980 nm IR probe)
  • 2-3um diameter measurement spot
  • Cognex pattern recognition system
  • Dual foup 200 and 300 mm bridge platform

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